Title
F6: Mixed-signal/RF design and modeling in next-generation CMOS.
Year
DOI
Venue
2013
10.1109/ISSCC.2013.6487605
ISSCC
Keywords
Field
DocType
CMOS integrated circuits,MOSFET,electrostatic discharge,integrated circuit design,radiofrequency integrated circuits,semiconductor device models,silicon-on-insulator,BSIM transistor model,EDA tool,ESD,FinFET,RF design,analog-RF-centric comparison,bias stress,device modeling,electrostatic discharge protection,foundry,integrated RF transceiver,mixed-signal design,next-generation CMOS,passive component,technology awareness,technology modeling,ultra-thin-body SOI technology
Transistor model,Electrostatic discharge,Computer science,BSIM,Electronic engineering,CMOS,Integrated circuit design,Mixed-signal integrated circuit,Design process,Electronic component,Electrical engineering
Conference
Citations 
PageRank 
References 
0
0.34
0
Authors
4
Name
Order
Citations
PageRank
Boris Murmann159482.64
Jafar Savoj215427.84
Piet Wambacq352996.10
Jieh-Tsorng Wu400.34