Title
Current status on GaN-based RF-power devices.
Year
DOI
Venue
2011
10.1109/ESSCIRC.2011.6044915
ESSCIRC
Keywords
DocType
Citations 
breakdown voltage,wide band gap semiconductors,logic gates,mocvd,mass production,transistors,chip,epitaxial growth,silicon,logic gate,cost effectiveness
Conference
0
PageRank 
References 
Authors
0.34
0
3
Name
Order
Citations
PageRank
Tetsuzo Ueda123.60
Tsuyoshi Tanaka201.01
Daisuke Ueda393.95