Name
Abstract | ||
|---|---|---|
A 512-Mb one-time-programmable memory is described, which uses a transistorless two-terminal memory cell containing an antifuse and a diode. Cells are fabricated in polycrystalline silicon, stacked vertically in eight layers above a 0.25-mum CMOS substrate. One-time programming is performed by applying a high voltage across the cell terminals, which ruptures the antifuse and permanently encodes a logic 0. Unruptured antifuses encode a logic 1. Cells are arranged in 8-Mb tiles, 1 K rows by 1 K columns by 8 bits high. The die contains 72 such tiles: 64 tiles for data and eight tiles for error-correcting code bits. Wordline and bitline decoders, bias circuits, and sense amplifiers are built in the CMOS substrate directly beneath the memory tiles, improving die efficiency. The device supports a generic standard HAND flash interface and operates from a single 3.3-V supply. |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1109/JSSC.2003.818147 | IEEE Journal of Solid-state Circuits |
Keywords | DocType | Volume |
CMOS memory circuits,PROM,VLSI,elemental semiconductors,memory architecture,silicon,0.25 micron,3.3 V,3D diode/antifuse memory cell array,512 Mbit,CMOS substrate,PROM,Si,bias circuits,bitline decoders,error-correcting code,generic standard NAND flash interface,one-time-programmable memory,polycrystalline Si,sense amplifiers,three-dimensional array,transistorless two-terminal memory cell,vertically stacked layers,wordline decoders | Journal | 38 |
Issue | ISSN | Citations |
11 | 0018-9200 | 8 |
PageRank | References | Authors |
2.19 | 1 | 14 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Johnson | 1 | 8 | 2.53 |
| A. Al-Shamma | 2 | 28 | 5.05 |
| D. Bosch | 3 | 112 | 13.44 |
| M. Crowley | 4 | 8 | 2.19 |
| M. Farmwald | 5 | 8 | 2.19 |
| L. Fasoli | 6 | 8 | 2.19 |
| A. Ilkbahar | 7 | 8 | 2.19 |
| B. Kleveland | 8 | 8 | 2.19 |
| T. Lee | 9 | 8 | 2.19 |
| Tz-yi Liu | 10 | 28 | 5.05 |
| Quang Nguyen | 11 | 8 | 2.19 |
| R. Scheuerlein | 12 | 8 | 2.19 |
| K. So | 13 | 8 | 2.19 |
| T. Thorp | 14 | 8 | 2.19 |