Name
Title | ||
|---|---|---|
Compact Modeling Of The P-I-N Diode Reverse Recovery Effect Valid For Both Low And High Current-Density Conditions |
Abstract | ||
|---|---|---|
Reverse-recovery modeling for p-i-n diodes in the high current-density conditions are discussed. With the dynamic carrier-distribution-based modeling approach, the reverse recovery behaviors are explained in the high current-density conditions, where the nonquasi-static (NQS) behavior of carriers in the drift region is considered. In addition, a specific feature under the high current-density condition is discussed. The proposed model is implemented into a commercial circuit simulator in the Verilog-A language and its reverse recovery modeling ability is verified with a two-dimensional (2D) device simulator, in comparison to the conventional lumped-charge modeling technique. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1587/transele.E95.C.1682 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
high-level injection, p-i-n diode, reverse recovery, carrier distribution, compact model, circuit simulation, SPICE | Step recovery diode,High current density,Spice,Diode,Electronic engineering,Reverse recovery,Engineering | Journal |
Volume | Issue | ISSN |
E95C | 10 | 1745-1353 |
Citations | PageRank | References |
1 | 0.63 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Masataka Miyake | 1 | 3 | 3.07 |
| Junichi Nakashima | 2 | 1 | 0.63 |
| Mitiko Miura-Mattausch | 3 | 11 | 16.18 |