Name
Abstract | ||
|---|---|---|
A 512times13 bit ultra-low-power subthreshold memory is fabricated on a 130-nm process technology. The fabricated memory is fully functional for read operation with a 190-mV power supply at 28 kHz, and 216 mV for write operation. Single bits are measured to read and write properly with VDD as low as 103 mV and 129 mV, respectively. The memory operates at a 1-MHz clock rate with a 310-mV power supp... |
Year | DOI | Venue |
|---|---|---|
2006 | 10.1109/JSSC.2006.881549 | IEEE Journal of Solid-State Circuits |
Keywords | DocType | Volume |
Power supplies,Circuits,Dynamic voltage scaling,Read-write memory,Clocks,Energy consumption,Power dissipation,Threshold voltage,Low voltage,Decoding | Journal | 41 |
Issue | ISSN | Citations |
10 | 0018-9200 | 36 |
PageRank | References | Authors |
6.48 | 13 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| J. Chen | 1 | 112 | 23.18 |
| L. T. Clark | 2 | 222 | 22.56 |
| T.-H. Chen | 3 | 36 | 6.48 |