Name
Abstract | ||
|---|---|---|
To innovate new devices such as nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs), fully analytic and explicit models become vastly more important as TCAD tools for device design and circuit simulation, but such tools have yet to be reported. In the present article, we propose a fully analytic and explicit model of ballistic and quasi-ballistic NW MOSFETs. Device properties are derived analytically in terms of one common parameter. This common parameter is obtained analytically by means of a one-of-a-kind approximation technique, which also achieves the desired fully analytic and explicit model. Finally, we demonstrate circuit simulations using the model. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1587/elex.10.20120906 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
NW MOSFET, fully analytic and explicit model, circuit simulation, quantum transport, drain-induced barrier lowering | Quantum transport,Computer science,Channel length modulation,Electronic engineering,Nanowire,Drain-induced barrier lowering | Journal |
Volume | Issue | ISSN |
10 | 1 | 1349-2543 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Tatsuhiro Numata | 1 | 0 | 0.34 |
| Shigeyasu Uno | 2 | 4 | 2.34 |
| Kazuo Nakazato | 3 | 37 | 15.05 |