Title
A Low-Noise Analog Baseband In 65nm Cmos
Abstract
In this paper, a universal receiver baseband approach is introduced. The chain includes a post-mixer noise shaping blocker pre-filter, a programmable-gain post mixer amplifier (PMA) with blocker suppression, a differential ramp-based linear-in-dB variable gain amplifier and a Sallen-Key output buffer. The 1.2-V chain is implemented in a 65-nm CMOS process, occupying a die area of 0.45 mm(2). While the device can be tuned across a bandwidth of 700-KHz to 5.2-MHz with 20 KHz resolution, it is tested for two distinct mobile-TV applications; Integrated Services Digital Broadcasting-Terrestrial ISDB-T (3-Segment fc=700 KHz) and Digital Video Broadcasting-Terrestrial/Handheld (DVB-T/H fc=3.8 MHz).
Year
DOI
Venue
2010
10.1109/CICC.2010.5617614
IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE 2010
Keywords
Field
DocType
resistors,gain,cmos,noise shaping,radio receivers,noise,variable gain amplifier,baseband
Variable-gain amplifier,Baseband,Computer science,Electronic engineering,Low noise,CMOS,Noise shaping,Resistor,Bandwidth (signal processing),Electrical engineering,Amplifier
Conference
Citations 
PageRank 
References 
1
0.47
2
Authors
3
Name
Order
Citations
PageRank
Hassan O. Elwan1176.39
Ahmet Tekin2427.48
Kenneth Pedrotti3324.80