Name
Title | ||
|---|---|---|
Improvement Of The Interface Quality Of The Al2o3/Iii-Nitride Interface By (Nh4)(2)S Surface Treatment For Algan/Gan Moshfets |
Abstract | ||
|---|---|---|
We performed the (NH4)(2)S surface treatments before Al2O3 deposition to improve the Al2O3/III-Nitride interface quality in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs). Interface state density at the Al2O3/GaN interface was decreased by the (NH4)(2)S treatment. The hysteresis width in I-D-V-GS and g(m)-V-GS characteristics of the Al2O3/AlGaN MOSHFETs with the (NH4)(2)S treatment was smaller than that without the (NH4)(2)S treatment. In addition, transconductance (g(m)) decrease at a large gate voltage was relaxed by the (NH4)(2)S treatment. We also performed ultraviolet (UV) illumination during the (NH4)(2)S treatment for further improvement of the Al2O3/III-Nitride interface quality. Interface state density of the Al2O3/GaN MOS diodes with the UV illumination was smaller than that without the UV illumination. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1587/transele.E95.C.1337 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | DocType | Volume |
GaN MOS diodes, Al2O3/AlGaN/GaN MOSHFETs, (NH4)(2)S, interface state density | Journal | E95C |
Issue | ISSN | Citations |
8 | 1745-1353 | 0 |
PageRank | References | Authors |
0.34 | 0 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Eiji Miyazaki | 1 | 0 | 0.34 |
| Shigeru Kishimoto | 2 | 4 | 2.78 |
| Takashi Mizutani | 3 | 9 | 3.81 |