Name
Abstract | ||
|---|---|---|
In this paper, we propose a method to estimate the read failure rate of a static random access memory (SRAM) cell. Conventional read stability metrics cannot accurately estimate the read failure probability as technology scales down, because some metrics cannot characterize read stability and others can no longer be approximated to a known distribution. We first introduce a one-sided static noise margin (OSNM), whose lower tail region follows a Gaussian distribution, and also propose a Gaussian-tail-fitting method that properly models the distribution of the OSNM at the tail region. It is demonstrated that the OSNM can accurately estimate the SRAM cell yield using the proposed Gaussian-tail-fitting method. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/TVLSI.2013.2268543 | IEEE Transactions on Very Large Scale Integration Systems |
Keywords | Field | DocType |
one sided static noise margin,integrated circuit reliability,read failure probability,yield estimation,static random access memory cell,gaussian tail-fitting method,sram chips,sram cell yield,yield estimation.,gaussian distribution,read stability metrics,integrated circuit noise,read failure rate,static random access memory (sram),read stability | Tail region,Static noise margin,Computer science,Failure rate,Electronic engineering,Static random-access memory,Real-time computing,Gaussian,Sram cell | Journal |
Volume | Issue | ISSN |
22 | 6 | 1063-8210 |
Citations | PageRank | References |
0 | 0.34 | 6 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hanwool Jeong | 1 | 42 | 8.47 |
| Younghwi Yang | 2 | 19 | 5.15 |
| Junha Lee | 3 | 2 | 2.43 |
| Jisu Kim | 4 | 211 | 28.11 |
| Seong-ook Jung | 5 | 332 | 53.74 |