Paper Info
Title
Novel Circuit Model of the Photovoltaic Modules Based on N-Channel MOS Transistor
Abstract
This paper proposes novel circuit model to simulate photovoltaic (PV) modules at different temperatures. The basic component of the new model is the N-channel enhancement mode MOSFET. The new approach simplifies the I-V output equation of PV module by avoiding the exponential term in the well-known diode models. In addition, it provides the ability to represent the whole PV module by only one MOSFET which reduces the simulation time needed to run a big system. Fast, simple and accurate algorithm is proposed based on the new circuit model. The proposed work is validated with datasheet curves of commercial mono-crystalline silicon, poly-crystalline silicon and copper indium diselenide (CIS) PV modules to have a maximum error as 5.4% of module short circuit current at standard test conditions (STC).
Year
DOI
Venue
2013
10.1109/EMS.2013.67
EMS
Keywords
Field
DocType
n-channel mos transistor,module short circuit,commercial mono-crystalline silicon,poly-crystalline silicon,novel circuit model,new model,pv module,well-known diode model,new approach,new circuit model,whole pv module,silicon
Computer science,Diode,Communication channel,Electronic engineering,Short circuit,Transistor,MOSFET,Electrical engineering,Photovoltaic system,Datasheet,Silicon
Conference
ISSN
Citations 
PageRank 
2473-3539
0
0.34
References 
Authors
0
2
Name
Order
Citations
PageRank
Heba N. Mohamed100.34
Soliman A. Mahmoud27319.73