Name
Abstract | ||
|---|---|---|
Neutral electron traps are generated in gate oxide during electrical stress, leading to degradation in the form of stress-induced leakage current (SILC) and eventually resulting in breakdown. SILC is the result of inelastic, trap-assisted tunneling of electrons that originate in the conduction band of the cathode. Deuterium annealing experiments call into question the interfacial hydrogen release model of the trap generation mechanism. A framework for modeling time-to-breakdown is presented. |
Year | DOI | Venue |
|---|---|---|
2001 | 10.1016/S0026-2714(01)00026-9 | Microelectronics Reliability |
Keywords | Field | DocType |
stress induced leakage current | Quantum tunnelling,Hydrogen,Leakage (electronics),Chemistry,Electronic engineering,Time-dependent gate oxide breakdown,Gate oxide,Cathode,Electron,SILC | Journal |
Volume | Issue | ISSN |
41 | 5 | 0026-2714 |
Citations | PageRank | References |
2 | 1.69 | 1 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Elyse Rosenbaum | 1 | 61 | 21.99 |
| Jie Wu | 2 | 2 | 1.69 |