Name
Abstract | ||
|---|---|---|
This paper presents a new technique for improving the quality factor of conventional active inductors by using the drain-source capacitance of a MOSFET in the cut-off region. This inductor is utilized to design a tunable notch filter for interference rejection in UWB LNA. Using a 0.13 mu m CMOS technology, simulation shows that the notch frequency can be tuned for about 1 GHz frequency range, and the quality factor is improved more than one order of magnitude compared to conventional active inductor. The power dissipation of the new active inductor is 2.4 mW from 1.2 V supply. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1587/elex.6.335 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
LNA, active inductor, image rejection, notch filter, tunable notch, UWB | Band-stop filter,Capacitance,Image response,Dissipation,Computer science,Inductor,Electronic engineering,CMOS,Interference (wave propagation),MOSFET | Journal |
Volume | Issue | ISSN |
6 | 6 | 1349-2543 |
Citations | PageRank | References |
1 | 0.48 | 2 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Seyed Hassan Elahi | 1 | 2 | 0.90 |
| Abdolreza Nabavi | 2 | 47 | 17.09 |