Title
A 1-Mb 2-Tr/b nonvolatile CAM based on flash memory technologies
Abstract
This paper describes the circuit technologies and the experimental results for a 1 Mb flash CAM, a content addressable memory LSI based on flash memory technologies. Each memory cell in the flash CAM consists of a pair of flash memory cell transistors. Additionally, four new circuit technologies have been developed: a small-size search sense amplifier; a highly parallel search management circuit; ...
Year
DOI
Venue
1996
10.1109/JSSC.1996.542304
IEEE Journal of Solid-State Circuits
Keywords
DocType
Volume
Nonvolatile memory,Computer aided manufacturing,CADCAM,Flash memory,Circuits,Associative memory,Large scale integration,Flash memory cells,Technology management,Production
Journal
31
Issue
ISSN
Citations 
11
0018-9200
7
PageRank 
References 
Authors
1.34
0
5
Name
Order
Citations
PageRank
Tohru Miwa171.34
Hachiro Yamada271.34
Yoshinori Hirota371.68
Toshiya Satoh471.34
Hideki Hara511013.63