Paper Info
Title
A SiGe BiCMOS linear regulator with wideband, high power supply rejection
Abstract
An improved biasing scheme for NMOS cascode structures for linear voltage regulators is proposed for mixed-signal communication systems. The proposed regulator achieves approximately 40 dB power supply rejection over wide frequency range, 15 mA load current regulation, and a regulated voltage temperature coefficient of 6 ppm/°C. This paper also presents a modified Gilbert cell SiGe-based HBT voltage reference circuit for the proposed regulator. The bandgap circuit demonstrates a simulated line regulation of 95 dB at DC, 70 dB at 1 MHz, and a reference voltage temperature coefficient of 2 ppm/°C. The proposed regulator has been designed for the IBM SiGe BiCMOS 0.35-μm process.
Year
DOI
Venue
2006
10.1145/1127908.1127944
ACM Great Lakes Symposium on VLSI
Keywords
Field
DocType
simulated line regulation,db power supply rejection,linear voltage regulator,current regulation,hbt voltage reference circuit,high power supply rejection,ibm sige bicmos,bandgap circuit,sige bicmos linear regulator,regulated voltage temperature coefficient,reference voltage temperature coefficient,proposed regulator,heterojunction bipolar transistor,chip,voltage regulator,bicmos,communication system,bandgap voltage reference
Linear regulator,Computer science,Line regulation,Voltage reference,Electronic engineering,Power supply rejection ratio,Electrical engineering,Low-dropout regulator,Bandgap voltage reference,Voltage regulator,Dropout voltage
Conference
ISBN
Citations 
PageRank 
1-59593-347-6
0
0.34
References 
Authors
4
3
Name
Order
Citations
PageRank
Hung D. Nguyen161.89
Benjamin J. Blalock23711.45
Suheng Chen341.48