Name
Title | ||
|---|---|---|
Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs |
Abstract | ||
|---|---|---|
We have investigated the effects of nonradiative recombination centers (NRCs) on the device performance of InGaN/GaN multi-quantum-well (MQW) light-emitting diodes (LEDs) inserting low-temperature n-GaN (LT-GaN) underlying layers. Inserting an LT-GaN underlying layer prior to growing the MQWs is a successful means of separating the induced nonradiative recombination centers because a growth interrupt interface exists between the n-GaN template and the InGaN QW. We found that by introducing this technique would improve the external quantum efficiency of the as-grown conventional LEDs. The electroluminescence relative intensity of a blue LED incorporating a 70-nm-thick LT-GaN was 20.6% higher (at 20mA current injection) than that of the corresponding as-grown blue LED in the best case. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1016/j.microrel.2010.01.017 | Microelectronics Reliability |
Keywords | Field | DocType |
external quantum efficiency,electroluminescence,light emitting diode | Quantum efficiency,Recombination,Diode,Luminescence,Electronic engineering,Engineering,Light-emitting diode,Optoelectronics,Electroluminescence | Journal |
Volume | Issue | ISSN |
50 | 5 | 0026-2714 |
Citations | PageRank | References |
1 | 0.38 | 0 |
Authors | ||
9 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ray-Ming Lin | 1 | 1 | 0.38 |
| Yung-Hsiang Lin | 2 | 7 | 0.83 |
| Chung-Hao Chiang | 3 | 1 | 0.38 |
| Mu-Jen Lai | 4 | 5 | 1.82 |
| Yi-Lun Chou | 5 | 1 | 0.38 |
| Yuan-Chieh Lu | 6 | 1 | 0.38 |
| Shou-Yi Kuo | 7 | 1 | 0.72 |
| Bor-Ren Fang | 8 | 1 | 0.38 |
| Meng-Chyi Wu | 9 | 5 | 2.98 |