Name
Title | ||
|---|---|---|
Temperature-dependence electrical performance of GaAs-based HEMT-embedded accelerometer. |
Abstract | ||
|---|---|---|
In this paper, it is researched that how I-V characteristics and piezoresistance coefficient of GaAs-based HEMT-embedded accelerometer change when different temperatures are set. It is shown that saturation current of device would go down if the temperature goes up, which is about 3.1467mA/°C, based on the research. However, the device can work well at the temperature range of -50°Cto 50°C, which indicates that it can work safely in the larger temperature range. Piezoresistance coefficient is also in down trend with the temperature rising, that it, it has negative temperature coefficient which is about 0.74%/°C, and it's sensitivity is higher than Si. ©2010 IEEE. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1109/NEMS.2010.5592281 | NEMS |
Keywords | Field | DocType |
gaas,hemt,i-v characteristic,piezoresistive coefficient,temperature-dependence,temperature,accelerometers,high electron mobility transistor,negative temperature coefficient,gallium arsenide,saturation current,temperature measurement | Gallium arsenide,Composite material,Electrical performance,Atmospheric temperature range,Saturation current,Accelerometer,Temperature coefficient,High-electron-mobility transistor,Temperature measurement,Materials science | Conference |
Volume | Issue | Citations |
null | null | 0 |
PageRank | References | Authors |
0.34 | 0 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Chenyang Xue | 1 | 16 | 9.07 |
| Zhenxin Tan | 2 | 0 | 0.68 |
| Tingting Hou | 3 | 13 | 5.61 |
| Guowen Liu | 4 | 5 | 1.93 |
| Jun Liu | 5 | 51 | 22.99 |
| Binzhen Zhang | 6 | 12 | 7.98 |