Name
Abstract | ||
|---|---|---|
We have investigated the selective epitaxial growth of GeSi bulk material on silicon-on-insulator substrates by reduced pressure chemical vapor deposition. We employed AFM, SIMS, and Hall measurements, to characterize the GeSi heteroepitaxy quality. Optimal growth conditions have been identified to achieve low defect density, low RMS roughness with high selectivity and precise control of silicon content. Fabricated vertical p-i-n diodes exhibit very low dark current density of 5 mA/cm(2) at -1 V bias. Under a 7.5 V/mu m E-field, GeSi alloys with 0.6% Si content demonstrate very strong electro-absorption with an estimated effective Delta alpha/alpha around 3.5 at 1,590 nm. We compared measured Delta alpha/alpha performance to that of bulk Ge. Optical modulation up to 40 GHz is observed in waveguide devices while small signal analysis indicates bandwidth is limited by device parasitics. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.3390/mi3020345 | MICROMACHINES |
Keywords | Field | DocType |
electro-absorption,germanium silicon,Franz-Keldysh effect,selective epitaxial growth | Silicon on insulator,Analytical chemistry,Diode,Waveguide,Franz–Keldysh effect,Dark current,Electronic engineering,Materials science,Silicon,Epitaxy,Chemical vapor deposition | Journal |
Volume | Issue | Citations |
3 | 2 | 0 |
PageRank | References | Authors |
0.34 | 1 | 16 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ying Luo | 1 | 1 | 0.78 |
| Xuezhe Zheng | 2 | 169 | 15.89 |
| Guoliang Li | 3 | 77 | 8.98 |
| Ivan Shubin | 4 | 54 | 5.03 |
| Hiren Thacker | 5 | 1 | 0.78 |
| Jin Yao | 6 | 1 | 0.78 |
| Jin-Hyoung Lee | 7 | 0 | 1.01 |
| Dazeng Feng | 8 | 0 | 0.34 |
| Joan Fong | 9 | 0 | 0.34 |
| Cheng-Chih Kung | 10 | 0 | 0.34 |
| Shirong Liao | 11 | 8 | 1.14 |
| Roshanak Shafiiha | 12 | 0 | 0.34 |
| Mehdi Asghari | 13 | 0 | 0.34 |
| Kannan Raj | 14 | 43 | 6.31 |
| Ashok V. Krishnamoorthy | 15 | 186 | 23.91 |
| John E. Cunningham | 16 | 77 | 8.86 |