Name
Title | ||
|---|---|---|
Influence of post-annealing on the mechanical and electrical properties of boron-doped nanocrystalline silicon thin films |
Abstract | ||
|---|---|---|
This work presents the influence of post-annealing on mechanical and electrical properties of boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited on Corning 7059 glass and Si substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. The basic mechanical properties of the films are measured by means of nanoindentation system. Using a four point resistivity test system, electrical properties of the films are characterized. It is found that, the value of elastic modulus and hardness of the films become larger after annealing. For those deposited by higher radio frequency (RF), the mechanical properties are enhanced notably. Annealing also affects the resistivity of films. With annealing temperature increasing, the resistivity of films decrease sharply. When annealing temperature up to 450°C, the resistivity of films become stable. Thin films still have a good quality at 500°C of annealing temperature and have a lowest resistivity. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1109/NEMS.2009.5068607 | NEMS |
Keywords | Field | DocType |
plasma enhanced chemical vapor,nanoindentation system,thin film,si substrate,electrical property,mechanical property,lowest resistivity,point resistivity test system,basic mechanical property,annealing temperature,boron-doped nanocrystalline silicon,annealing,elastic moduli,si,elastic modulus,radio frequency,electrical resistivity,thin film deposition,conductivity,resistivity,boron,plasma enhanced chemical vapor deposition,silicon,hardness,films,thin films | Composite material,Plasma-enhanced chemical vapor deposition,Annealing (metallurgy),Nanocrystalline silicon,Thin film,Nanoindentation,Materials science,Silicon,Electrical resistivity and conductivity,Carbon film | Conference |
Volume | Issue | ISSN |
null | null | 2474-3747 |
ISBN | Citations | PageRank |
978-1-4244-4630-8 | 0 | 0.34 |
References | Authors | |
0 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| J. N. Ding | 1 | 0 | 0.34 |
| H. S. Qi | 2 | 0 | 0.34 |
| N. Y. Yuan | 3 | 0 | 0.34 |
| Y. L. He | 4 | 0 | 0.34 |
| Guoliang Chen | 5 | 305 | 46.48 |