Title
Prediction Of Circuit-Performance Variations From Technology Variations For Reliable 100 Nm Soc Circuit Design
Abstract
The long-standing problem of predicting circuit performance variations without a huge number of statistical investigations is demonstrated to be solvable by a surface-potential-based MOSFET model. Direct connection of model parameters to physical device parameters reflecting process variations and the reduced number of model parameters are the enabling key model properties. It has been proven that the surface-potential-based model HiSIM2 is capable of reproducing measured I-V and its derivatives' variations with those of device/process related model parameters. When used to predict 51-stage ring oscillator frequency variation including both inter- and intra-chip variation, it reproduces measurements with shortened simulation time.
Year
DOI
Venue
2011
10.1587/transele.E94.C.361
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
circuit simulation, compact model, DFM, reliability
EKV MOSFET Model,Ring oscillator,System on a chip,Circuit design,Electronic engineering,Engineering,Circuit performance,MOSFET,Design for manufacturability,Electrical engineering,Integrated circuit
Journal
Volume
Issue
ISSN
E94C
3
1745-1353
Citations 
PageRank 
References 
0
0.34
2
Authors
7