Name
Abstract | ||
|---|---|---|
Our study indicates that there are significant advantages in developing THz quantum cascade lasers (QCLs) with GaN-based quantum well (QW) structures. While the ultrafast longitudinal optical (LO) phonon scattering in AlGaN/GaN QWs can be used for the rapid depopulation of the lower laser state, the large LO-phonon energy (∼90meV) can effectively reduce the thermal population of the lasing states. Our investigation shows that GaN-based THz QCLs can potentially be operating cw at room temperature. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1016/j.mejo.2005.02.044 | Microelectronics Journal |
Keywords | Field | DocType |
Quantum cascade laser,Terahertz emission,Gallium nitride,Quantum wells | Gallium nitride,Population,Phonon scattering,Quantum cascade laser,Laser,Terahertz radiation,Lasing threshold,Quantum well,Optoelectronics,Condensed matter physics,Physics | Journal |
Volume | Issue | ISSN |
36 | 3 | 0026-2692 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| G. Sun | 1 | 0 | 1.01 |
| Richard A. Soref | 2 | 2 | 3.47 |