Name
Abstract | ||
|---|---|---|
•GaN HEMT with different gate field-plate geometries have been tested.•Increasing field-plate length improves the device large signal performances.•Increasing field-plate length improves device stability during RF stress test. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1016/j.microrel.2013.07.033 | Microelectronics Reliability |
Field | DocType | Volume |
Gallium nitride,Rf testing,Electronic engineering,Engineering,High-electron-mobility transistor,Geometry,Reliability engineering | Journal | 53 |
Issue | ISSN | Citations |
9 | 0026-2714 | 2 |
PageRank | References | Authors |
0.51 | 1 | 8 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Alessandro Chini | 1 | 43 | 13.88 |
| F. Soci | 2 | 4 | 1.23 |
| F. Fantini | 3 | 33 | 10.12 |
| A. Nanni | 4 | 6 | 1.99 |
| A. Pantellini | 5 | 6 | 2.67 |
| Claudio Lanzieri | 6 | 10 | 4.44 |
| Gaudenzio Meneghesso | 7 | 67 | 38.27 |
| Enrico Zanoni | 8 | 60 | 37.05 |