Name
Title | ||
|---|---|---|
Transient thermo-reflectance measurements of the thermal conductivity and interface resistance of metallized natural and isotopically-pure silicon |
Abstract | ||
|---|---|---|
The transient thermoreflectance method has been used to measure the thermal conductivity of natural silicon and isotopically-pure silicon-28 layers that are epitaxially grown on natural silicon substrates. The measurements were performed at room temperature for both a low level (1016) and a higher level (2×1019) of Boron doping of the epitaxial layers. The results indicate a gain of approximately 55% in the thermal conductivity of Si28 as compared to that of natural Si, at both low and higher levels of doping, and a loss of approximately 19% for both types of silicon due to the higher level of doping. |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1016/S0026-2692(03)00201-5 | Microelectronics Journal |
Keywords | Field | DocType |
Transient thermoreflectance method,Epitaxial layer,Natural silicon,Isotopically-pure silicon-28,Boron doping,Thermal conductivity | BORO,Doping,Waveform,Boron,Engineering,Reflectivity,Optoelectronics,Silicon,Condensed matter physics,Epitaxy,Thermal conductivity | Journal |
Volume | Issue | ISSN |
34 | 12 | 0026-2692 |
Citations | PageRank | References |
2 | 0.91 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Pavel L. Komarov | 1 | 2 | 1.93 |
| Mihai G. Burzo | 2 | 38 | 4.54 |
| Gunhan Kaytaz | 3 | 2 | 0.91 |
| Peter E. Raad | 4 | 2 | 2.94 |