Title
Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers
Abstract
We have calculated the band structure of 1.55@mm InGaAsP/InGaAsP multi-quantum-well structures using Luttinger-Kohn Hamiltonian taking into account the strain in the quantum wells (QWs) and barriers, and the confinement in the quantum wells. Using the calculated dispersion curves and oscillator strength between the different interband transitions, we have determined the optical gain in TE and TM mode and the spontaneous amplified emission as a function of injected carrier density in devices composed of quantum wells with different thicknesses. We find that an optical gain linewidth larger than 130nm with a TE/TM polarization dependence lower than 1dB can be obtained using a three-quantum-well In"0"."5"3Ga"0"."4"7As"0"."9"6P"0"."0"4/InGaAsP active layer with quantum well thicknesses of 10, 14 and 19nm.
Year
DOI
Venue
2009
10.1016/j.mejo.2008.11.029
Microelectronics Journal
Keywords
Field
DocType
different thickness,mm ingaasp,polarization-insensitive semiconductor,ingaasp multi-quantum-well structure,tm mode,calculated dispersion curve,ingaasp active layer,inp-based wide linewidth,tm polarization dependence,strained ingaasp multi-quantum-well structure,quantum well,optical gain,different interband transition,optical amplifier,oscillations,semiconductor optical amplifier,quantum wells,band structure,soa
Optical amplifier,Spontaneous emission,Laser linewidth,Polarization (waves),Electronic engineering,Engineering,Quantum well,Oscillator strength,Transverse mode,Semiconductor,Condensed matter physics
Journal
Volume
Issue
ISSN
40
4-5
Microelectronics Journal
Citations 
PageRank 
References 
0
0.34
0
Authors
8
Name
Order
Citations
PageRank
H. Carrère101.01
V. G. Truong200.34
X. Marie341.22
T. Amand400.68
B. Urbaszek500.34
R. Brenot600.34
F. Lelarge700.68
B. Rousseau800.34