Title
CMOS multiplier based on the relationship between drain current and inversion charge
Abstract
The authors propose a four-quadrant multiplier based on a core cell that exploits the general relationship between the saturation current of an MOS transistor and the source inversion charge density, valid from weak to strong inversion. The advantages of the proposed circuit are simplicity, low distortion and feasibility of low-voltage operation. Experimental results in a 0.35 mum CMOS prototype i...
Year
DOI
Venue
2009
10.1049/iet-cds.2008.0287
IET Circuits, Devices & Systems
Keywords
Field
DocType
analogue multipliers,CMOS analogue integrated circuits,low-power electronics,MOSFET
Saturation current,Multiplier (economics),Electronic engineering,CMOS,Low voltage,Transistor,MOSFET,Electrical engineering,Distortion,Mathematics,Low-power electronics
Journal
Volume
Issue
ISSN
3
5
1751-858X
Citations 
PageRank 
References 
2
0.56
3
Authors
5
Name
Order
Citations
PageRank
M. B. Machado120.56
A. I. A. Cunha252.48
L. A. de Lacerda320.56
C. Galup-Montoro4418.21
M. C. Schneider57514.58