Title
A 0.6-V Delta–Sigma Modulator With Subthreshold-Leakage Suppression Switches
Abstract
A 0.6-V 34-muW delta-sigma modulator implemented by using a standard 0.13-mum complementary metal-oxide-semiconductor technology is presented. This brief analyzes a subthreshold-leakage current problem in switched-capacitor circuits and proposes subthreshold-leakage suppression switches to solve the problem. To verify the operation of the subthreshold-leakage suppression switches, two different fifth-order delta-sigma modulators are implemented with conventional switches and new switches. The input feedforward architecture is used to reduce the voltage swings of the integrators. A high-performance low-quiescent amplifier architecture is developed for the modulator. The modulator, with new switches, achieves a dynamic range of 83 dB, a peak signal-to-noise ratio of 82 dB, and a peak signal-to-noise-plus-distortion ratio of 81 dB in a signal bandwidth of 20 kHz. The power consumption is 34 muW for the modulator, and the core chip size is 0.33 mm2 .
Year
DOI
Venue
2009
10.1109/TCSII.2009.2032444
IEEE Trans. on Circuits and Systems
Keywords
Field
DocType
signal bandwidth,switched capacitor networks,peak signal-to-noise-plus-distortion ratio,cmos integrated circuits,switched-capacitor circuit,complementary metal-oxide-semiconductor technology,harmonic distortion,signal-to-noise-plus-distortion ratio (sndr),leakage current,modulator,delta-sigma modulator,delta–sigma modulator,switched-capacitor circuits,voltage 0.6 v,subthreshold-leakage current problem,different fifth-order delta-sigma modulators,bandwidth 20 khz,w delta-sigma modulator,delta-sigma modulation,integrator voltage swings,high-performance low-quiescent amplifier architecture,analog-to-digital converter (adc),brief analyzes,peak signal-to-noise ratio,power semiconductor switches,subthreshold-leakage suppression,power 34 muw,size 0.13 mum,new switch,input feedforward architecture,subthreshold-leakage suppression switches,threshold voltage,delta modulation,delta sigma modulator,cmos technology,chip,complementary metal oxide semiconductor,delta sigma modulation,switched capacitor circuits,dynamic range,switched capacitor,switches,analog circuits,peak signal to noise ratio
Total harmonic distortion,Control theory,Delta modulation,Switched capacitor,CMOS,Electronic engineering,Delta-sigma modulation,Modulation,Subthreshold conduction,Electrical engineering,Mathematics,Amplifier
Journal
Volume
Issue
ISSN
56
11
1549-7747
Citations 
PageRank 
References 
14
1.63
6
Authors
6
Name
Order
Citations
PageRank
Hyungdong Roh1536.30
Hyoungjoong Kim2313.76
Youngkil Choi3666.41
Jeongjin Roh415320.91
Yi-Gyeong Kim5243.78
Jong-Kee Kwon615823.10