Name
Abstract | ||
|---|---|---|
Vertical double diffused MOSFET (VDMOS) is an established technology for high- current power-switching applications such as automotive circuits. The most serious failure mode is destructive damage during inductive switching, resulting from avalanche breakdown of the forward-blocking junction in the presence of high current flow. Improving the ruggedness of the device is achieved by enhancing its a... |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1049/iet-cds:20070008 | IET Circuits, Devices & Systems |
Keywords | Field | DocType |
avalanche breakdown,MOSFET,power semiconductor devices,semiconductor device breakdown,semiconductor device models,switching circuits | Failure mode and effects analysis,Avalanche breakdown,Circuit design,Electronic engineering,Bipolar junction transistor,MOSFET,Electronic circuit,Transistor,Mathematics,Commutation | Journal |
Volume | Issue | ISSN |
1 | 5 | 1751-858X |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
14 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| H. P. E. Xu | 1 | 1 | 0.82 |
| Olivier Trescases | 2 | 44 | 6.99 |
| I-Shan Michael Sun | 3 | 2 | 0.80 |
| Dora Lee | 4 | 3 | 1.19 |
| Wai Tung Ng | 5 | 36 | 8.51 |
| Kenji Fukumoto | 6 | 19 | 1.88 |
| Akira Ishikawa | 7 | 0 | 0.34 |
| Yuichi Furukawa | 8 | 0 | 0.34 |
| Hisaya Imai | 9 | 0 | 0.34 |
| Takashi Naito | 10 | 0 | 0.34 |
| Nobuyuki Sato | 11 | 0 | 0.34 |
| Satoru Tamura | 12 | 0 | 0.34 |
| Kaoru Takasuka | 13 | 49 | 9.42 |
| Teiichiro Kohno | 14 | 0 | 0.34 |