Name
Abstract | ||
|---|---|---|
We report on the observation of a very strong, broad and asymmetric H-band photoluminescence (PL) spectrum in silica delta-doped p-type Al0.35Ga0.65As-GaAs heterojunctions (SHs). Doping type (n- or p-type) dramatically changes the H-band PL emission. When optical excitation intensity increases by two orders of magnitude, a redshift of H-band in the delta-doped p-type SH is as large as 27 meV. The results of self-consistent calculation of coupled Schrodinger and Poisson equations and PL analysis indicate that the H-band originates from effective band-gap renormalization due to two-dimensional hole-gas. (C) 2003 Elsevier Science Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1016/S0026-2692(03)00119-8 | MICROELECTRONICS JOURNAL |
Keywords | Field | DocType |
semiconductor heterojunctions,band-gap renormalization,photoluminescence | Renormalization,Redshift,Doping,Excitation,H band,Order of magnitude,Heterojunction,Condensed matter physics,Photoluminescence,Physics | Journal |
Volume | Issue | ISSN |
34 | 5-8 | 0026-2692 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| F. Qu | 1 | 0 | 1.69 |
| Antônio Tadeu Lino | 2 | 0 | 0.34 |
| N. O. Dantas | 3 | 0 | 2.03 |
| P.C. Morais | 4 | 0 | 1.01 |
| E.C.F. da Silva | 5 | 0 | 0.68 |
| A.A. Quivy | 6 | 1 | 2.99 |
| J.R. Leite | 7 | 1 | 2.99 |