Name
Abstract | ||
|---|---|---|
This paper discusses Mixed Signal LSI technology with embedded power transistors. Trends in Mixed Signal LSI technology are explained at first. Mixed signal LSI technology has proceeded with the help of fine fabrication technology and SOI technology. The BEOL transistor is a new development, which uses InGaZnO (IGZO) as its TFT channel material. The BEOL transistor is one future device which enables 3D IC and chip shrinking technology. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1587/transele.E97.C.238 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
Mixed Signal LSI, BiC-DMOS, analog, power IC, InGaZnO (IGZO) | Silicon on insulator,Thin-film transistor,Power semiconductor device,Communication channel,Chip,Electronic engineering,Three-dimensional integrated circuit,Engineering,Mixed-signal integrated circuit,Transistor,Electrical engineering | Journal |
Volume | Issue | ISSN |
E97C | 4 | 1745-1353 |
Citations | PageRank | References |
1 | 0.48 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Kenichi Hatasako | 1 | 1 | 0.48 |
| Tetsuya Nitta | 2 | 1 | 0.48 |
| Masami Hane | 3 | 2 | 0.96 |
| Shigeto Maegawa | 4 | 4 | 1.70 |