Paper Info
Title
Improved Stability of Large Area Excimer Laser Crstallised Polysilicon Thin Film Transistors under DC and AC Operating
Abstract
High improvement of the polysilicon Thin Film Transistors made from large area excimer laser crystallised films is reported. Due to this weak reliability, the use of these TFTs in practical applications was, until now, subject to caution even their field effect mobility is greater than that of solid phase crystallised TFTs. Assuming that the weak reliability may occur from the behaviour of ambient impurities as oxygen, nitrogen... that can be introduced in the silicon film during the air performed laser crystallisation, crystallisation is made in neutral ambience in this work. Very weak variation of the subthreshold slope S is obtained (DeltaS = 0.02, more than 10 times weaker than in the air crystallisation case!) under gate bias stress. Physical explanation of this better stability deals with the relation between the importance of the disordered regions and the move of impurities during the stress that leads to low stability. Larger grains in the polycristalline structure induce higher stability. Moreover, as these TFTs are commonly used as switching devices in the most of applications in large area electronics field, the present work shows that the effect of DC gate bias stress is higher than that of the AC stress. (C) 2001 Elsevier Science Ltd. All rights reserved.
Year
DOI
Venue
2001
10.1016/S0026-2714(01)00208-6
Microelectronics Reliability
Keywords
Field
DocType
thin film transistor
Thin-film transistor,Excimer laser,Electronic engineering,Engineering,Optoelectronics
Journal
Volume
Issue
ISSN
41
9
0026-2714
Citations 
PageRank 
References 
0
0.34
0
Authors
7
Name
Order
Citations
PageRank
H. Toutah132.23
J.F. Llibre211.09
B. Tala-Ighil3133.17
T. Mohammed-Brahim411.42
Y. Helen500.34
G. Gautier600.34
O. Bonnaud7139.82