Name
Abstract | ||
|---|---|---|
Most of the new generation compact models for the MOSFET have many commonalities since they are based on the same main approximations: gradual channel, charge-sheet, and depletion charge linearization. In this study we show that if we include some additional physics-consistent conditions for the MOSFET equations we obtain a very compact model that we call the advanced compact MOSFET (ACM) model. The core ACM model, design-oiriented equations, parameter extraction, and a design example are presented. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1109/CICC.2007.4405785 | PROCEEDINGS OF THE IEEE 2007 CUSTOM INTEGRATED CIRCUITS CONFERENCE |
Keywords | Field | DocType |
MOS transistor, MOSFET models, compact models, transistor-level design | Computer science,Network synthesis filters,Communication channel,Control engineering,Advanced compact mosfet,Electronic engineering,Network analysis,MOSFET,Electrical engineering,Linearization | Conference |
Citations | PageRank | References |
2 | 0.41 | 4 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Carlos Galup-Montoro | 1 | 236 | 40.80 |
| Márcio Cherem Schneider | 2 | 18 | 3.36 |
| Ana Isabela Araújo Cunha | 3 | 5 | 1.92 |
| Fernando Rangel de Sousa | 4 | 43 | 12.99 |
| hamilton klimach | 5 | 71 | 20.07 |
| Osmar Franca Siebel | 6 | 11 | 2.47 |