Paper Info
Title
Temperature-dependent breakdown and hot carrier stress of PHEMTs.
Abstract
The main issues this work addresses, with reference to commercial GaAs PHEMTs, are the temperature dependence of the off-state breakdown voltage (BVDG), the physical mechanisms that determine it, and the relationship between BVDG and device degradation and failure, as determined by accelerated step-stress performed at temperatures ranging from 25 to 100degreesC. BVDG is seen to decrease with temperature between room temperature and 160degreesC. Temperature-dependent analysis of the gate leakage current indicates that thermionic-field emission and thermionic emission over a field-dependent barrier are the limiting mechanisms for off-state breakdown. Roomtemperature, hot carrier step-stress tests with 24 h step duration show reduced I-DSS after the stress and a tight correlation between the BVDG measured at I-G = - 1 mA/mm and the stress bias producing substantial device degradation or catastrophic failure. Shorter (2 h) step stress experiments carried out between 25 and 100degreesC again show a tight correlation between the BVDG measured at I-G = -1 mA/mm and the stress bias producing dramatic degradation or failure. This correlation, coupled with the negligible temperature dependence of the breakdown voltage in this temperature range, results in temperature-independent device degradation. (C) 2004 Elsevier Ltd. All rights reserved.
Year
DOI
Venue
2004
10.1016/j.microrel.2004.07.016
MICROELECTRONICS RELIABILITY
Field
DocType
Volume
Thermionic emission,Leakage (electronics),Atmospheric temperature range,Chemistry,Electronic engineering,Degradation (geology),Breakdown voltage,Stress (mechanics),High-electron-mobility transistor,Field electron emission
Journal
44
Issue
ISSN
Citations 
9-11
0026-2714
0
PageRank 
References 
Authors
0.34
0
4
Name
Order
Citations
PageRank
P. Cova17326.17
Nicola Delmonte24413.83
Giovanna Sozzi363.04
Roberto Menozzi4258.90