Name
Abstract | ||
|---|---|---|
Sensing elements based on AlGaN/GaN HEMT and Schottky diode structures have been investigated in relation with the strain sensitivity of their characteristics. Piezoresistance of the Al0.3Ga0.7N/GaN HEMT-channel as well as changes in the current-voltage characteristics of the Schottky diodes have been observed with gauge factor (GF) values ranging between 19 and 350 for the selected biasing conditions. While a stable response to strain was measured, the observed temperature dependence of the channel resistance demonstrates the need for a systematic characterisation of the sensor properties to allow compensation of the observed temperature effects. |
Year | DOI | Venue |
|---|---|---|
2006 | 10.1093/ietele/e89-c.7.1037 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
GaN, pressure sensor, HEMT, Schottky diode | Strain (chemistry),Sensing applications,Gauge factor,Electronic engineering,Pressure sensor,Ranging,Schottky diode,Engineering,High-electron-mobility transistor,Biasing | Journal |
Volume | Issue | ISSN |
E89C | 7 | 0916-8524 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Oktay Yilmazoglu | 1 | 0 | 0.34 |
| Kabula Mutamba | 2 | 2 | 2.01 |
| Dimitris Pavlidis | 3 | 3 | 4.09 |
| Marie Rose Mbarga | 4 | 0 | 0.34 |