Title
A 0.13µm 64Mb multi-layered conductive metal-oxide memory.
Year
DOI
Venue
2010
10.1109/ISSCC.2010.5433945
ISSCC
Keywords
Field
DocType
decoding,nonvolatile memory,sensors,programming,materials,chip,non volatile memory,leakage current
Oxide,Leakage (electronics),Resistive touchscreen,Computer science,Electrical conductor,Chip,NAND gate,Electronic engineering,Physical layer,Non-volatile memory
Conference
Citations 
PageRank 
References 
4
0.63
1
Authors
7