Paper Info
Title
Study of parasitic and stray components induced ringings in class E power amplifiers in MHz range
Abstract
For class E power amplifier circuits operating at switching frequencies of the MHz range or higher, the parasitic capacitance of the MOS transistor switch becomes a significant part of the circuit adding to the usual intended circuit components. For the class E power amplifier, this is often regarded as an advantage because the parasitic capacitor can be utilized for achieving zero voltage and current switchings, thus reducing the size of an external capacitor which has to be inserted. However, parallel connection of parasitic, stray and external capacitors may give rise to high-frequency ringings of the voltage across the switch, causing the circuit to deviate from the desired class E operation. In this paper, the phenomenon and its underlying cause is studied by simulations and experiments. A circuit model of the amplifier with parasitic or stray components is developed to explain the phenomenon.
Year
DOI
Venue
2005
10.1109/ECCTD.2005.1523077
Circuit Theory and Design, 2005. Proceedings of the 2005 European Conference
Keywords
DocType
Volume
stray component,class e power amplifiers,mos transistor switch,parasitic capacitance,power amplifiers,zero voltage switching,high-frequency ringings,zero current switching,network analysis,mosfet,switching frequency,parasitic component,power amplifier,high frequency
Conference
3
ISBN
Citations 
PageRank 
0-7803-9066-0
1
0.41
References 
Authors
0
4
Name
Order
Citations
PageRank
Hao Zhang19715.19
Siu-Chung Wong216731.39
Chi K. Tse31153155.94
Xikui Ma49614.64