Title
Magnetically engineered spintronic sensors and memory
Abstract
The discovery of enhanced magnetoresistance and oscillatory interlayer exchange coupling in transition metal multilayers just over a decade ago has enabled the development of new classes of magnetically engineered magnetic thin-film materials suitable for advanced magnetic sensors and magnetic random access memories. Magnetic sensors based on spin-valve giant magnetoresistive (GMR) sandwiches with...
Year
DOI
Venue
2003
10.1109/JPROC.2003.811807
Proceedings of the IEEE
Keywords
DocType
Volume
Magnetoelectronics,Magnetic sensors,Magnetic materials,Enhanced magnetoresistance,Random access memory,Giant magnetoresistance,Magnetic tunneling,Read-write memory,Magnetic films,Antiferromagnetic materials
Journal
91
Issue
ISSN
Citations 
5
0018-9219
7
PageRank 
References 
Authors
1.63
0
6
Name
Order
Citations
PageRank
Stuart Parkin13311.77
Xin Jiang282.35
C. Kaiser31923.57
A. Panchula471.63
K. Roche571.63
M. Samant671.63