Paper Info
Title
Reliability of High-K Dielectrics and Its Dependence on Gate Electrode and Interfacial / High-K Bi-Layer Structure.
Abstract
In this work, we present the reliability of HfO2 and how it depends on the barrier height and the nature of the bi-layer structure. We will also discuss how these factors lead to different charge fluence, charge-to-breakdown, and breakdown characteristics. It is found that the lower Weibull slope of high-k dielectrics is partially attributed to high charge fluence by the lower barrier height of high-k dielectrics, and a different nature of bi-layer structure. In addition, it has been found that there is distinct bi-modal defect generation rate for high-k/SiO2 stack. A two-step breakdown process was clearly observed. Soft breakdown characteristics were dependent on the barrier heights. It is attributed to different charge fluence by different barrier heights. Charge-to-breakdown shows strong barrier height dependence. (C) 2004 Elsevier Ltd. All rights reserved.
Year
DOI
Venue
2004
10.1016/j.microrel.2004.07.049
MICROELECTRONICS RELIABILITY
Field
DocType
Volume
Weibull slope,Dielectric,Electric breakdown,Soft breakdown,Chemistry,Electrode material,Electronic engineering,High-κ dielectric,Electrode,Fluence
Journal
44
Issue
ISSN
Citations 
9-11
0026-2714
0
PageRank 
References 
Authors
0.34
0
6
Name
Order
Citations
PageRank
Y.-H. Kim115821.90
R. Choi200.34
R. Jha300.34
Jin-Hyoung Lee401.01
Veena Misra5273.38
J. C. Lee61812.05