Name
Abstract | ||
|---|---|---|
We report tuned amplifiers designed for the 140-220-GHz frequency band. The amplifiers were designed in a transferred-substrate InP-based heterojunction bipolar transistor technology that enables efficient scaling of the parasitic collector-base junction capacitance. A single-stage amplifier exhibited 6.3-dB small-signal gain at 175 GHz. Three-stage amplifiers were subsequently fabricated with one... |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1109/JSSC.2003.815906 | IEEE Journal of Solid-State Circuits |
Keywords | DocType | Volume |
Heterojunction bipolar transistors,Power amplifiers,Frequency,Indium phosphide,HEMTs,MODFETs,Broadband amplifiers,III-V semiconductor materials,Parasitic capacitance,Space exploration | Journal | 38 |
Issue | ISSN | Citations |
9 | 0018-9200 | 0 |
PageRank | References | Authors |
0.34 | 0 | 8 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Urteaga | 1 | 16 | 7.43 |
| D. Scott | 2 | 0 | 0.34 |
| S. Krishnan | 3 | 0 | 0.34 |
| Yun Wei | 4 | 0 | 0.34 |
| M. Dahlstrom | 5 | 4 | 2.13 |
| Z. Griffith | 6 | 0 | 0.34 |
| N. Parthasarathy | 7 | 0 | 0.34 |
| M. J. W. Rodwell | 8 | 20 | 6.02 |