Name
Abstract | ||
|---|---|---|
We propose an InAs/GaSb/AlSb-based asymmetric resonant interband tunneling diode (a-RITD) as a spin filter. The device exploits the Rashba effect to achieve spin polarization under zero magnetic field using nonmagnetic III-V semiconductor heterostructures. We discuss the basic principles of the interband tunneling spin filter, and present modeling results that demonstrate its advantage. We also propose an implementation procedure for realizing device structure. |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1109/JPROC.2003.811801 | Proceedings of the IEEE |
Keywords | DocType | Volume |
III-V semiconductors,aluminium compounds,electron spin polarisation,gallium compounds,indium compounds,magnetoelectronics,resonant tunnelling diodes,III-V semiconductor heterostructure,InAs-GaSb-AlSb,InAs/GaSb/AlSb asymmetric resonant interband tunneling diode,Rashba effect,spin filter,spin polarization,spintronic device | Journal | 91 |
Issue | ISSN | Citations |
5 | 0018-9219 | 0 |
PageRank | References | Authors |
0.34 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| D. Z.-Y. Ting | 1 | 0 | 1.35 |
| Cartoixa, Xavier | 2 | 0 | 0.34 |
| D. H. Chow | 3 | 0 | 0.68 |
| J. S. Moon | 4 | 0 | 0.34 |
| D. L. Smith | 5 | 0 | 0.68 |
| T. C. Mcgill | 6 | 0 | 0.68 |
| J. N. Schulman | 7 | 0 | 0.68 |