Name
Title | ||
|---|---|---|
Implementation of diode and bipolar triggered SCRs for CDM robust ESD protection in 90 nm CMOS ASICs |
Abstract | ||
|---|---|---|
We report the characterization of diode and bipolar triggered SCRs with VFTLP measurements and product ESD testing. A dual base Darlington bipolar triggered SCR (DbtSCR) in a triple well structure is demonstrated to provide 4kV HBM, 300V MM, and 1000V CDM protection for 90nm ASIC I/Os. A very fast turn-on time of 460ps was measured for the DbtSCR, compared to 8ns for a diode triggered SCR. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1016/j.microrel.2006.11.009 | Microelectronics Reliability |
Field | DocType | Volume |
Electrostatic discharge,Diode,Rise time,Application-specific integrated circuit,Electronic engineering,CMOS,Engineering,Thyristor,Transistor,Electrical engineering,Integrated circuit | Journal | 47 |
Issue | ISSN | Citations |
7 | 0026-2714 | 1 |
PageRank | References | Authors |
0.45 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ciaran J. Brennan | 1 | 1 | 0.79 |
| Shunhua Chang | 2 | 1 | 0.45 |
| Min Woo | 3 | 1 | 0.45 |
| Kiran Chatty | 4 | 6 | 2.69 |
| Robert Gauthier | 5 | 1 | 0.45 |