Title
Spectral Narrowing Effect Of A Novel Super-Grating Dual-Gate Structure For Plasmon-Resonant Terahertz Emitter
Abstract
We have proposed a terahertz (THz) emitter utilizing two-dimensional plasmons (2DPs) in a super-grating dual-ate (SGG) high electron mobility transistor (HEMT). The plasmon under each grating gate has a unique feature that its resonant frequency is determined by the plasma-wave velocity over the gate length. Since the drain bias voltage causes a linear potential slope from the Source to drain area, the sheet electron densities in periodically distributed 2DP cavities are dispersed. As a result, all the resonant frequencies are dispersed and undesirable spectral broadening Occurs. A SGG structure can compensate for the sheet electron density distribution by modulating the grating dimension. The finite difference time domain simulation confirms its spectral narrowing effect. Within a wide detuning range for the gate and drain bias voltages giving a frequency shifting of +/- 0.5 THz from an optimum condition, the SGG structure can preserve the spectral narrowing effect.
Year
DOI
Venue
2009
10.1587/transele.E92.C.696
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
terahertz, plasmon resonance, emitter, dispersion control, grating dimension
Electron density,Grating,Common emitter,Optics,Electronic engineering,Doppler broadening,Terahertz radiation,Engineering,High-electron-mobility transistor,Plasmon,Biasing
Journal
Volume
Issue
ISSN
E92C
5
1745-1353
Citations 
PageRank 
References 
1
0.63
0
Authors
4
Name
Order
Citations
PageRank
Takuya Nishimura133.01
Nobuhiro Magome210.63
Hyun-Chul Kang3211141.92
Tai-ichi Otsuji42313.08