Name
Title | ||
|---|---|---|
Application Of Microwave Photoconductivity Decay Method To Characterization Of Amorphous In-Ga-Zn-O Films |
Abstract | ||
|---|---|---|
Microwave photoconductivity decay (mu-PCD) method was applied to evaluate the effects of chemical composition and Ar+ plasma induced damage on the bulk and the surface states in amorphous In-Ga-Zn-O (a-IGZO) films. It was found that the peak reflectivity signal in the photoconductivity response increased with decreasing the Ga content, and had a strong correlation with the a-IGZO transistor performances. In addition, the peak reflectivity signals obtained after various Ar+ plasma treatment duration were well correlated with the transistor characteristics. With Ar+ plasma treatment, the peak reflectivity signal decreased in accordance with degradation of transistor characteristics. The mu-PCD method was found to be a very useful tool not only to evaluate the bulk and the surface states, but also to predict the performance of a-IGZO transistors subjected to various plasma processes in the production. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1587/transele.E95.C.1724 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
microwave photoconductivity decay, a-IGZO, oxide semiconductor, photoconductivity response | Chemical composition,Microwave,Photoconductivity,Electronic engineering,Degradation (geology),Plasma,Engineering,Transistor,Surface states,Amorphous solid | Journal |
Volume | Issue | ISSN |
E95C | 11 | 1745-1353 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Satoshi Yasuno | 1 | 0 | 0.34 |
| Takashi Kita | 2 | 0 | 0.34 |
| Shinya Morita | 3 | 0 | 0.34 |
| Aya Hino | 4 | 0 | 0.34 |
| Kazushi Hayashi | 5 | 2 | 1.15 |
| Toshihiro Kugimiya | 6 | 0 | 1.01 |
| Shingo Sumie | 7 | 0 | 0.34 |