Name
Abstract | ||
|---|---|---|
Experimental investigations on detection of terahertz radiation are presented. We used plasma wave instability phenomenon in nanometer Silicon field effect transistor. A 30 nm gate length transistor was illuminated by THz radiation at room temperature. We observe a maximum signal near to the threshold voltage. This result clearly demonstrates the possibility of plasma wave THz operation of these nanometer scale devices. The response was attributed to a non resonant detection. We also demonstrate the possibility to observe a resonant detection on the same devices. |
Year | DOI | Venue |
|---|---|---|
2006 | 10.1093/ietele/e89-c.7.993 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
CMOS, plasma oscillations, plasma instability, terahertz radiation, magnetoresistance mobility | Particle detector,Waves in plasmas,Field-effect transistor,Optics,Electronic engineering,CMOS,Terahertz radiation,Plasma oscillation,Transistor,Threshold voltage,Optoelectronics,Physics | Journal |
Volume | Issue | ISSN |
E89C | 7 | 1745-1353 |
Citations | PageRank | References |
2 | 0.58 | 0 |
Authors | ||
10 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yahya Moubarak Meziani | 1 | 2 | 0.92 |
| Jerzy Lusakowski | 2 | 4 | 2.08 |
| Nina Dyakonova | 3 | 2 | 1.59 |
| Wojciech Knap | 4 | 36 | 10.83 |
| Dalius Seliuta | 5 | 2 | 1.25 |
| Edmundas Sirmulis | 6 | 2 | 0.58 |
| Jan Devenson | 7 | 2 | 0.58 |
| Gintaras Valusis | 8 | 2 | 0.58 |
| Frédéric Boeuf | 9 | 6 | 2.49 |
| Thomas Skotnicki | 10 | 2 | 2.27 |