Name
Abstract | ||
|---|---|---|
Quantum confinement effect near the silicon/silicon-oxide interface reduces the total channel charge, capacitance, current but it increases the surface potential of the MOSFET device due to thin gate dielectric (below 4 nm). The surface potential compact models with quantum effect are usually derived using a semiconductor band gap widening approach. In this paper we construct a compact surface potential model for the MOS structure directly from the Density Gradient (DG) equations. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1016/j.mcm.2009.08.023 | Mathematical and Computer Modelling |
Keywords | Field | DocType |
silicon-oxide interface,semiconductor band gap widening,mos structure,quantum corrections,surface potential,mosfet,surface potential compact model,compact surface potential model,compact quantum surface potential,mosfet device,analytic solution,quantum confinement effect,quantum effect,density gradient,lambert function,band gap,quantum confinement | Quantum,Capacitance,Band gap,Potential well,Gate dielectric,MOSFET,Quantum Hall effect,Condensed matter physics,Silicon,Physics | Journal |
Volume | Issue | ISSN |
51 | 7-8 | Mathematical and Computer Modelling |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hedley C. Morris | 1 | 1 | 0.89 |
| Henok Abebe | 2 | 0 | 0.34 |