Name
Abstract | ||
|---|---|---|
Electromigration-induced void evolutions in various dual-inlaid Copper (Cu) interconnect structures were simulated by applying a phenomenological model resorting to Monte Carlo based simulations, which considers redistribution of heterogeneously nucleated voids and/or pre-existing vacancy clusters at the Cu/dielectric cap interface during electromigration. The results indicate that this model can qualitatively explain the electromigration-induced void evolutions observations in many studies reported by several researchers heretofore. These findings warrant need to reinvestigate technologically important electromigration mechanisms by developing rigorous models based on similar concepts. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1109/ICETET.2009.217 | Emerging Trends in Engineering and Technology |
Keywords | Field | DocType |
surface void migration,vlsi interconnect,pre-existing vacancy cluster,rigorous model,dielectric cap interface,findings warrant,phenomenological model,important electromigration mechanism,heterogeneously nucleated void,electromigration-induced void evolutions observation,electromigration-induced void evolution,monte carlo,vlsi,dielectrics,nucleation,electromigration,cathodes,monte carlo methods,atmospheric modeling,copper,cu | Cluster (physics),Monte Carlo method,Vacancy defect,Dielectric,Electromigration,Void (astronomy),Interconnection,Materials science,Phenomenological model,Condensed matter physics | Conference |
ISBN | Citations | PageRank |
978-0-7695-3884-6 | 0 | 0.34 |
References | Authors | |
0 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| D. J. Pete | 1 | 0 | 0.34 |
| J. B. Helonde | 2 | 1 | 2.43 |
| Rohan Bhattacharya | 3 | 0 | 0.34 |