Name
Abstract | ||
|---|---|---|
High output power AlGaN/GaN metal-insulator-semiconductor (MIS) hetero-junction field effect transistor (HFET) on Si substrate for millimeter-wave application has developed. High temperature chemical vapor deposition (HT-CVD) grown SiN as a gate insulator improves the breakdown characteristics which enables the operation at high drain voltage of 55 V. The device exhibits high drain current of 1.1 A/mm free from the current collapse and high RF gain of 10.4 dB. The amplifier module developed AlGaN/GaN MIS-HFET with the gate width of 5.4 mm exhibits an output power of 10.7 W and a linear gain of 4 dB at 26.5 GHz. The resultant high output power is very promising for long-distance communication at millimeter-wave in the future which would enable high speed and high density data transmission. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1587/transele.E95.C.1327 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
AlGaN/GaN MIS-HFET, K-band, power amplifier, Si substrate, high-temperature chemical vapor deposition SiN | K band,Optics,Engineering,Optoelectronics,Amplifier | Journal |
Volume | Issue | ISSN |
E95C | 8 | 0916-8524 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Noboru Negoro | 1 | 1 | 0.74 |
| Masayuki Kuroda | 2 | 21 | 2.47 |
| Tomohiro Murata | 3 | 11 | 5.22 |
| Masaaki Nishijima | 4 | 0 | 0.34 |
| Yoshiharu Anda | 5 | 0 | 0.34 |
| Hiroyuki Sakai | 6 | 5 | 0.88 |
| Tetsuzo Ueda | 7 | 2 | 3.60 |
| Tsuyoshi Tanaka | 8 | 0 | 1.01 |