Title
A Volterra-Based Procedure for Multi-Port and Multi-Zone GaN FET Amplifier CAD Simulation
Abstract
This paper reports a systematic method for the computer-aided-design (CAD) simulation of GaN FET power amplifiers (PAs). The core of the proposal is a Volterra-based behavioral model (BM) with multi-spectral and multi-node capabilities, which black-box structure is formally derived from a circuit-level representation of the PA and accounts for both short and long-term memory effects. Starting with the equivalent circuit of a typical FET device with thermal power feedback, the structures of the kernels for the gate, drain and thermal nodes are developed and are shown to be dependent on the frequency response of the PA terminating impedances and thermal filter. The model has been applied to simulate the nonlinear response of a typical PA circuit, showing the ability of the proposed model to provide an accurate prediction of multi-spectral, multi-node characteristics, including AM/AM-AM/PM conversion, spectral regrowth, intermodulation, and temperature rise, under diverse input signal waveforms and bandwidths. These results have been successfully compared with commercial CAD tools based on harmonic balance or envelope simulation.
Year
DOI
Venue
2013
10.1109/TCSI.2013.2252691
IEEE Trans. on Circuits and Systems
Keywords
Field
DocType
black box structure,multiport fet amplifier cad simulation,electrothermal memory effects,wide band gap semiconductors,circuit level representation,volterra equations,multizone fet amplifier cad simulation,harmonic balance,am am conversion,frequency response,distortion,power amplifiers,technology cad (electronics),equivalent circuit,nonlinear systems,gallium compounds,volterra series,behavioral modeling,iii-v semiconductors,am pm conversion,spectral regrowth,thermal filter,gan,equivalent circuits,envelope simulation,volterra based behavioral model,temperature rise,nonlinear response,computer-aided-design,time-domain kernels,volterra based procedure,thermal power feedback,intermodulation,circuit simulation
Frequency response,Waveform,Electrical impedance,FET amplifier,Electronic engineering,Harmonic balance,Intermodulation,Mathematics,Equivalent circuit,Amplifier
Journal
Volume
Issue
ISSN
60
11
1549-8328
Citations 
PageRank 
References 
0
0.34
3
Authors
4