Name
Abstract | ||
|---|---|---|
The semiconductor devices modelling became today an indispensable tool in the electronic and power electronic fields. Recently several devices models are presented, resulting from semiconductors physics and which are intended only for the design and to the improvement of device performances themselves. On the other hand, as users one, we are interested in their electrical and thermal behaviour. Indeed, the insertion of these devices in a circuit environment necessitates enough often to find models from passive elements and that reproduce the same behaviour. It appears therefore necessary to adapt the existing models or to develop new behavioural devices models to solve evoked problems in the circuits design. In this way, our paper is interested in the modelling of the IGBT device. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1109/ICECS.2007.4510938 | ICECS |
Keywords | Field | DocType |
behavioural device model,electrothermal modelling,insulated gate bipolar transistors,semiconductor device models,electrical behaviour,thermal behaviour,igbt device,semiconductor devices modelling,circuit design,circuit simulation,power electronics,semiconductor devices,transistors,gain,mathematical model,resistance | Computer science,Circuit design,Control engineering,Electronic engineering,Insulated-gate bipolar transistor,Mosfet circuits,Electronic circuit,Transistor,Semiconductor device,Electrical engineering,Semiconductor | Conference |
ISBN | Citations | PageRank |
978-1-4244-1378-2 | 0 | 0.34 |
References | Authors | |
0 | 2 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Elmostafa Elwarraki | 1 | 0 | 0.68 |
| Abderrafia Sabir | 2 | 0 | 0.34 |