Name
Abstract | ||
|---|---|---|
With the rapid advances in the area of memory product, it has become more and more important to maintain its reliability while increasing the density and speed performance. Particularly, flash memory products have inherent difficulties in lengthening the limited lifetime due to the degradation of memory cell reliability caused by repeated read and/or write operations. To increase the benefits of high density flash memory, more advanced techniques such as multi-leveling the cell and signal processing has been adopted to the flash memory products. In this paper, arising challenges that leading engineers in semiconductor memory industries have confronted will be shared to further develop cutting-edge flash memory products. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1109/ISCAS.2012.6272049 | ISCAS |
Keywords | Field | DocType |
integrated circuit reliability,signal processing,semiconductor memory industries,memory product area,high density flash memory,error control coding,coding errors,memory cell reliability,cutting-edge flash memory products,read-write operations,read-only storage,flash memories,modulation,encoding,decoding,reliability | Registered memory,Semiconductor memory,Interleaved memory,Flash file system,Flash memory,Computer science,Non-volatile random-access memory,Computer hardware,Computer memory,Memory refresh | Conference |
ISSN | ISBN | Citations |
0271-4302 | 978-1-4673-0218-0 | 6 |
PageRank | References | Authors |
0.77 | 6 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Beomkyu Shin | 1 | 15 | 3.79 |
| Changkyu Seol | 2 | 63 | 5.38 |
| Jung-soo Chung | 3 | 33 | 6.67 |
| Jun Jin Kong | 4 | 51 | 5.83 |