Name
Abstract | ||
|---|---|---|
Two 3.65-mW, ESD-protected, BiCMOS ultra-wideband low-noise amplifiers (LNAs) for operation up to 10 GHz are presented. These common-base LNAs achieve significant savings in die area over more widely used cascoded common-emitter LNAs because they do not use an LC input matching network. A design with a shunt peaked load achieves a high S21 (17-19 dB) and low noise figure (NF) (4-5 dB) across the b... |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1109/JSSC.2007.894826 | IEEE Journal of Solid-State Circuits |
Keywords | Field | DocType |
Silicon germanium,Germanium silicon alloys,BiCMOS integrated circuits,Ultra wideband technology,Noise measurement,Low-noise amplifiers,Impedance matching,Noise figure,Electrostatic discharge,Protection | Low-noise amplifier,BiCMOS,Computer science,Current source,Impedance matching,Noise figure,Electronic engineering,Ultra-wideband,Heterojunction bipolar transistor,Electrical engineering,Amplifier | Journal |
Volume | Issue | ISSN |
42 | 5 | 0018-9200 |
Citations | PageRank | References |
7 | 0.86 | 3 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Karan Bhatia | 1 | 297 | 26.11 |
| Sami Hyvonen | 2 | 14 | 3.23 |
| Elyse Rosenbaum | 3 | 61 | 21.99 |