Title | ||
---|---|---|
An wide-range tunable on-chip radio-frequency LC-tank formed with a post-CMOS-compatible MEMS fabrication technique |
Abstract | ||
---|---|---|
An on-chip-micromachined tunable LC-tank, which consists of a metal inter-digitated variable capacitor and a metal solenoid inductor, is developed for wide-range radio-frequency (RF) tuning in multi-GHz band. A low-temperature metal MEMS process is developed to on-chip fabricate the passives. The process can be used for post-CMOS-compatible integration with RF ICs. Both the varactor and the inductor are suspended with a gap from the low-resistivity silicon wafer (i.e. standard CMOS wafer) for effectively depressing RF loss. The fabricated variable capacitor part, the inductor part and the whole tunable LC resonator are sequentially tested, finally resulting in a wide resonance-frequency tuning range of 72% (between about 3.5 and 6.0GHz) under a low tuning voltage range of 0-4V, while the Q-factor ranged within 23 and 8. |
Year | DOI | Venue |
---|---|---|
2009 | 10.1016/j.mejo.2008.06.065 | Microelectronics Journal |
Keywords | Field | DocType |
low-resistivity silicon wafer,metal solenoid inductor,rf ics,low tuning voltage range,inductor part,rf loss,low-temperature metal mems process,variable capacitor,post-cmos-compatible mems fabrication technique,on-chip-micromachined tunable,standard cmos wafer,chip,resonant frequency,silicon wafer,micromachining,radio frequency | LC circuit,Wafer,Variable capacitor,Resonator,Inductor,CMOS,Electronic engineering,Radio frequency,Engineering,Electrical engineering,Varicap | Journal |
Volume | Issue | ISSN |
40 | 1 | Microelectronics Journal |
Citations | PageRank | References |
0 | 0.34 | 1 |
Authors | ||
3 |
Name | Order | Citations | PageRank |
---|---|---|---|
Lei Gu | 1 | 38 | 7.66 |
Zhengzheng Wu | 2 | 0 | 0.34 |
Xinxin Li | 3 | 31 | 11.80 |